Raman amplifying device and raman amplifying system

ABSTRACT

A Raman amplifying device includes a plurality of Raman amplifiers having a gain wavelength characteristic with a gain peak at which an amplification gain becomes the largest, including a first Raman amplifier having a gain wavelength characteristic with a plurality of gain peaks including a first gain peak and a second gain peak adjacent to the first gain peak; a second Raman amplifier having a gain wavelength characteristic with at least one gain peak including a third gain peak between the first gain peak and the second gain peak; and a third Raman amplifier having a gain wavelength characteristic with a fourth gain peak between the first gain peak and the third gain peak, the fourth gain peak forming an arithmetic sequence between the first gain peak and the third gain peak.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of PCT/JP03/10981 filed on Aug. 28,2003, the entire content of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1) Field of the Invention

The present invention relates to a Raman amplifying device including aplurality of Raman amplifiers having a gain characteristic with a gainpeak at which an amplification gain is maximized.

2) Description of the Related Art

Development of optical communication systems that have a largetransmission capacity and can perform long distance transmission isunder way, with the recent development of optical communications such asthe Internet. From the standpoint of increasing the transmissioncapacity, a wavelength division multiplexing (WDM) method and a densewavelength division multiplexing (DWDM) method have been proposed andput into practical use. The WDM method is a communication method inwhich a plurality of signal lights having a different wavelength istransmitted in the same optical transmission path, and the DWDM methodis a communication method in which more signal lights than in the WDMmethod are transmitted in the same optical transmission path. Byadopting these communication methods, the quantity of signals that canbe transmitted at the same time increases, thereby enabling an increasein the transmission capacity in the optical communications.

From the standpoint of realizing the long distance transmission, it iswidely practiced to arrange optical amplifying devices that amplify theintensity of the signal light attenuated on the way of transmissionthrough the optical communication path. As the optical amplifyingdevice, an erbium doped fiber amplifier (EDFA) and a Raman amplifyingdevice using Raman amplification are well known. Particularly, the Ramanamplifying device can amplify a light of an optional wavelength bychanging the wavelength of a pump light, thereby having an advantage inthat there is a wide room for choice of the signal light.

When an optical communication system combining the WDM method or theDWDM method with the Raman amplification is to be realized, it isimportant to provide an amplification gain of the same level withrespect to signal lights having transmitted through the sametransmission path and having a different wavelength from each other.Particularly, when a plurality of Raman amplifying devices is arrangedon the transmission path, since a gain deviation of the individual Ramanamplifying device is accumulated, flattening of the gain wavelengthcharacteristic of the optical amplifier is an important issue.

Therefore, an example is heretofore disclosed in which one Ramanamplifier referred to as a W-type, having a peak (hereinafter, “gainpeak”) of the gain wavelength characteristic in a wavelength band offrom 1539 to 1579 nanometers, at the opposite ends and substantially atthe center of the band, and one Raman amplifier referred to as anM-type, having a gain peak between the gain peaks of the W-type Ramanamplifier are combined to form a Raman amplifying device (for example,see Optical Amplifiers and There Application 2001 July OTuA3).

However, flattening of the gain wavelength characteristic cannot besufficiently realized as a whole, only by the configuration in which twoRaman amplifiers are simply combined to simply compensate for peaks andvalleys in the respective gain wavelength characteristics.

Furthermore, even when the Raman amplifying device is formed as in theconventional art, when the Raman amplifying device is actually assembledin the optical communication system, the gain wavelength characteristicmay not become flat. That is, in the optical communication system inwhich long distance transmission is performed, a Raman gain coefficientin optical fibers for performing Raman amplification or an attenuationconstant of an input pump light may change from the values at the timeof designing, due to fluctuations in the temperature or the like in theexternal environment. Therefore, even if the Raman amplifying device hasa flat gain wavelength characteristic at the time of designing, the gainwavelength characteristic may be changed when the optical communicationsystem is actually laid down.

In the actual optical communication system, problems due to amalfunction in a pump light source or the like, which forms the Ramanamplifying device, should be taken into consideration. In the opticalcommunication system laid down in a wide range, determination of thespot having the malfunction is not easy, and repair work may bedifficult according to the place of the spot having the malfunction.Therefore, it is desired to provide a mechanism that can maintain thegain deviation in the optical communication system in a certain range,even when a part of the optical communication system has a malfunction.

Furthermore, when a system in which the Raman amplifiers are connectedin multiple stages is designed according to the conventional art, it isnecessary to design the gain wavelength characteristic of the individualRaman amplifier separately, so that a desired gain wavelengthcharacteristic can be obtained as the entire system. Therefore, there isa problem in that the designing process becomes very complicated anddifficult.

The present invention has been achieved in order to solve the aboveproblems in the conventional art, and it is an object of the presentinvention to realize a Raman amplifying device including a plurality ofRaman amplifiers and capable of maintaining the gain deviation within acertain tolerance, and a Raman amplifying system combining a pluralityof Raman amplifying devices.

SUMMARY OF THE INVENTION

It is an object of the present invention to solve at least the aboveproblems in the conventional technology.

A Raman amplifying device according to one aspect of the presentinvention includes a plurality of Raman amplifiers having a gainwavelength characteristic with a gain peak at which an amplificationgain becomes the largest including a first Raman amplifier having a gainwavelength characteristic with a plurality of gain peaks including afirst gain peak and a second gain peak adjacent to the first gain peak;a second Raman amplifier having a gain wavelength characteristic with atleast one gain peak including a third gain peak between the first gainpeak and the second gain peak; and a third Raman amplifier having a gainwavelength characteristic with a fourth gain peak between the first gainpeak and the third gain peak, the fourth gain peak forming an arithmeticsequence between the first gain peak and the third gain peak.

A Raman amplifying device according to another aspect of the presentinvention includes a plurality of Raman amplifiers having a gainwavelength characteristic with a gain peak at which an amplificationgain becomes the largest including at least one Raman amplifier having afirst gain characteristic; and at least one Raman amplifier having asecond gain characteristic shifted from the first gain characteristic bya shift amount determined based on a periodic distribution obtained fromsum approximation of periodic functions with respect to the first gaincharacteristic.

A Raman amplifying system according to still another aspect of thepresent invention includes a first group including a plurality of Ramanamplifiers, each of the Raman amplifiers having a gain peak of adifferent wavelength; a second group including a plurality of Ramanamplifiers connected to an end of the first group, each of the Ramanamplifiers having a gain peak of a different wavelength; and an entiregain controller connected to an end of the second group, the entire gaincontroller classifying the Raman amplifiers belonging to the first andthe second groups into a predetermined set to control gain wavelengthcharacteristic.

The other objects, features, and advantages of the present invention arespecifically set forth in or will become apparent from the followingdetailed description of the invention when read in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a Raman amplifying device according to afirst embodiment of the present invention;

FIG. 2 is a block diagram of the structure of a Raman amplifierconstituting the Raman amplifying device according to the firstembodiment;

FIG. 3 is a graph of a gain wavelength characteristic of the Ramanamplifying device according to the first embodiment;

FIG. 4 is a graph in which a wavelength intensity characteristic of anamplified light obtained by the Raman amplifying device according to thefirst embodiment is compared with the wavelength intensitycharacteristic of an amplifier obtained by a conventional Ramanamplifier;

FIG. 5 is a block diagram of the structure of an amplification gaincontroller constituting the Raman amplifying device according to thefirst embodiment;

FIG. 6 is a graph of a state in which the gain wavelength characteristicis disturbed in the Raman amplifying device according to the firstembodiment;

FIG. 7 is a flowchart of the operation of the amplification gaincontroller constituting the Raman amplifying device according to thefirst embodiment;

FIG. 8 is a graph of the gain wavelength characteristic of the Ramanamplifying device, flattened by the operation of the amplification gaincontroller according to the first embodiment;

FIGS. 9A and 9B are tables of the gain wavelength characteristic beforethe control by the amplification gain controller;

FIG. 10 is a table of the gain wavelength characteristic after thecontrol by an amplification gain controller in an Example;

FIGS. 11A to 11C is a diagram for explaining a derivation mechanism of ashift amount of a gain characteristic in a Raman amplifying deviceaccording to a second embodiment of the present invention;

FIG. 12 is a graph of the gain characteristic of a Raman amplifier A inExample 1 in the second embodiment;

FIG. 13 is a graph of a result of Fourier transformation of the gaincharacteristic of the Raman amplifier A;

FIG. 14 is a graph of the gain characteristics of Raman amplifiers A andB;

FIG. 15 is a graph of the gain characteristic of the entire Ramanamplifying device according to the Example 1;

FIG. 16 is a graph of a result of Fourier transformation of the gaincharacteristics of the Raman amplifiers A and B in a Raman amplifyingdevice according to the Example 2;

FIG. 17 is a graph of the gain characteristic of the entire Ramanamplifying device according to Example 2;

FIG. 18 is a block diagram of the structure of a Raman amplifying systemaccording to a third embodiment of the present invention;

FIG. 19 is a block diagram of the structure of an entire gain controllerin the Raman amplifying system according to the third embodiment; and

FIG. 20 is a flowchart of the operation of the entire gain controller inthe Raman amplifying system according to the third embodiment.

DETAILED DESCRIPTION

Exemplary embodiments of a Raman amplifying device and a Ramanamplifying system according to the present invention will be explainedbelow with reference to the accompanying drawings. In the drawings, likeor similar elements are designated with like reference signs. It shouldbe noted that the drawings are only schematic, and are different fromthe actual products. Furthermore, it is a matter of course that inrespective drawings, parts may have a different relation and ratio insize.

A Raman amplifying device according to a first embodiment of the presentinvention will be explained first. FIG. 1 is a block diagram of theentire structure of the Raman amplifying device. The structure of theRaman amplifying device according to the first embodiment will beexplained below.

The Raman amplifying device according to the first embodiment has Ramanamplifiers 1 to 4 sequentially connected to an input terminal an opticalbranching unit 6 connected to the Raman amplifier 4, an amplificationgain controller 7 connected to one of output terminals of the opticalbranching unit 6, and an output terminal 8 formed of the other of theoutput terminals of the optical branching unit 6.

FIG. 2 is a diagram of the structure of the Raman amplifier 1. The Ramanamplifier 1 has semiconductor laser devices 9 a to 9 d that function asa pump light source, fiber gratings 10 a to 10 d respectively providedcorresponding to the semiconductor laser devices 9 a to 9 d, an opticalcoupler 11 a that couples laser light output from the semiconductorlaser devices 9 a and 9 b, and an optical coupler 11 b that coupleslaser light output from the semiconductor laser devices 9 c and 9 d. TheRaman amplifier 1 further has an optical coupler 12 that further couplesthe laser light output from the optical couplers 11 a and 11 b to form apump light, and the formed pump light has a structure to be input to anamplifying transmission line 14 via the optical coupler 13. As shown inFIG. 2, the Raman amplifier 1 uses a backward pumping method in whichthe traveling direction of the pump light in an amplifying transmissionline 14 is opposite to the traveling direction of the Raman-amplifiedlight, but a forward pumping method or a bidirectional pumping methodcan be used.

The semiconductor laser devices 9 a and 9 b have a structure of emittinglaser light having substantially the same peak wavelength definedrespectively by the fiber gratings 10 a and 10 b. The semiconductorlaser devices 9 c and 9 d emit laser light having substantially the samepeak wavelength defined respectively by the fiber gratings 10 c and 10d, and the wavelength interval between the peak wavelengths of thesemiconductor laser devices 9 a and 9 b and the peak wavelength of thesemiconductor laser devices 9 c and 9 d is at least 6 nanometers. Athermostatic module (not shown) is respectively added to thesemiconductor laser devices 9 a to 9 d and the fiber gratings 10 a to 10d so as to have a structure capable of changing the temperature thereof.

The semiconductor laser devices 9 a and 9 b and the optical coupler 11 aare connected by a polarization-preserving fiber, and the laser lightoutput from the semiconductor laser devices 9 a and 9 b are coupled bythe optical coupler 11 a so as to be orthogonal to each other. It isbecause Raman amplification has polarization dependency, and it isdesired to perform Raman amplification after the pump light isdepolarized, in order to stabilize the amplification gain. Thesemiconductor laser devices 9 c and 9 d and the optical coupler 11 b arealso connected by a polarization-preserving fiber due to the samereason, and coupled so that the polarization direction of the laserlight is orthogonal to each other.

The Raman amplifiers 2 to 4 have basically the same structure as that ofthe Raman amplifier 1 shown in FIG. 2, but the semiconductor laserdevices and the fiber gratings are formed such that the centralwavelength at the gain peak has a different value, respectively. FIG. 3is a graph of the gain wavelength characteristic of the Raman amplifyingdevice according to the first embodiment, formed by combining the gainwavelength characteristics of the Raman amplifiers 1 to 4. A curve I₁indicates a gain wavelength characteristic of the Raman amplifier 1,curves I₂, I₃, and I₄ sequentially indicate gain wavelengthcharacteristics of the Raman amplifiers 2, 3, and 4. A curve I₅ obtainedby combining the curves I₁ to I₄ indicate the gain wavelengthcharacteristic of the Raman amplifying device according to the firstembodiment.

As shown in FIG. 3, the gain peaks obtained from the Raman amplifiers 1to 4 are different from each other, and the central wavelengths λ₁, λ₂,λ₃, and λ₄ at the respective gain peaks respectively form an arithmeticsequence. In the first embodiment, it is assumed that a tolerance of thearithmetic sequence formed by the wavelengths corresponding to therespective gain peaks is a value obtained by dividing a differencebetween the wavelengths λ₁ and λ₁′ of two gain peaks obtained from theRaman amplifier 1 by the number of Raman amplifiers. Likewise, it isassumed that the wavelengths λ₁′, λ₂′, λ₃′, and λ₄′ of other gain peaksobtained from the Raman amplifiers 1 to 4 respectively form anarithmetic sequence, and a tolerance of the arithmetic sequence is avalue obtained by dividing a difference between the wavelengths λ₁ andλ₁′ by the number of Raman amplifiers. In the first embodiment, thenumber of gain peaks obtained by the Raman amplifier 1 is set to two,but if there are three or more gain peaks of the Raman amplifier 1, itis desired that a mean value of the wavelength intervals between theadjacent gain peaks is used as the tolerance.

Regarding the gain wavelength characteristics obtained from the Ramanamplifiers 1 to 4, since the wavelength of the gain peaks obtained fromthe respective Raman amplifiers 1 to 4 is different, it is preventedthat the gain deviation is accumulated, as compared with an instance inwhich a plurality of Raman amplifiers having the same gain wavelengthcharacteristic is included. Particularly, the interval between therespective gain peaks becomes equal by setting the gain wavelengthcharacteristics of the Raman amplifiers 1 to 4 such that the respectivegain peak wavelengths form an arithmetic sequence. As a result, asindicated by the curve I₅, the Raman amplifying device according to thefirst embodiment has a flat gain wavelength characteristic. Furthermore,since the Raman amplifying device has a configuration of obtaining thegain by the Raman amplifiers, there is no limitation in the wavelengthinterval between the adjacent gain peaks, and the wavelength intervalcan be reduced to 6 nanometers or less, thereby increasing the flatness.The wavelength interval is preferably 6 nanometers or less, and morepreferably, 0.3 nanometers or less.

FIG. 4 is a graph in which a gain wavelength characteristic obtained bycombining the Raman amplifiers having the same characteristic as in theconventional example, and the gain wavelength characteristic of theRaman amplifying device according to the first embodiment are comparedwith each other. As shown in FIG. 4, the Raman amplifying deviceaccording to the first embodiment includes Raman amplifiers having thegain wavelength characteristics denoted by curves I₆ to I₁₀,respectively, and as a result of amplifying the light by the Ramanamplifying device having the gain wavelength characteristic obtained bycombining the respective gain wavelength characteristics, the wavelengthintensity characteristic of the amplified light becomes as indicated bya curve I₁₁.

On the other hand, for example, when five Raman amplifiers having thegain wavelength characteristic as indicated by the curve I₆ are simplycombined as in the conventional example, the wavelength intensitycharacteristic of the amplified light becomes as indicated by a curveI₁₂. When the wavelength range of the signal light to be amplified isfrom 1540 to 1595 nanometers, as is obvious from the comparison of thecurves I₁₁ and I₁₂, a deviation of the amplification gain in such awavelength range is largely different. Specifically, the intensitydeviation of the light amplified by the Raman amplifying deviceaccording to the first embodiment is 0.9 decibel, while the intensitydeviation becomes equal to more than 3 decibels in the conventionalexample.

The amplification gain controller 7 will be explained next. FIG. 5 is ablock diagram of the structure of the amplification gain controller 7.The amplification gain controller 7 has, as shown in FIG. 5, an opticalbranching filter 15 that braches the Raman-amplified light, andphotoelectric transducers 16 a to 16 h that convert the respectivebranched light to an electric signal. The photoelectric transducers 16 ato 16 f are connected to a control wavelength detector 18. The controlwavelength detector 18 is connected to a storage unit 17 to detectabnormal wavelength components in the amplified light by comparinginformation stored in the storage unit 17 and the input electric signal.A controller 19 is connected to the control wavelength detector 18, thestorage unit 17, and the Raman amplifiers 1 to 4.

The optical branching filter 15 is used for branching the input light tolight in a predetermined wavelength range, to output the light.Specifically, the optical branching filter 15 is formed of a melt-typecoupler or the like, formed by melting and combining a plurality ofoptical fibers.

The photoelectric transducers 16 a to 16 h are used for converting theinput light to an electric signal corresponding to the intensity.Specifically, the photoelectric transducers 16 a to 16 h are formed of aphotodiode, a photoresistor, and the like.

The storage unit 17 is for storing information necessary for controllingthe gain wavelength characteristic. Specifically, the storage unit 17stores information relating to the intensity tolerance of the respectivewavelength components of the light branched by the optical branchingfilter 15, information relating to the wavelength of the gain peakcorresponding to the wavelength components of the light input to theamplification gain controller 7, and information for specifying theRaman amplifier that supplies such a gain peak.

The control wavelength detector 18 is for specifying the Raman amplifierto be controlled. Specifically, the control wavelength detector 18 hasfunctions of comparing the intensity of the branched light with theintensity tolerance of the light stored in the storage unit 17,detecting the wavelength of the wavelength component of the light havingthe intensity outside the tolerance, detecting a predetermined gain peakbased on the wavelength, and selecting the Raman amplifier for supplyingthe detected gain peak.

The controller 19 is for controlling the control wavelength detector 18,the storage unit 17, and the Raman amplifiers 1 to 4. Specifically, thecontroller 19 controls the operation of the control wavelength detector18 and the storage unit 17, and also has a function of controlling thesemiconductor laser device that outputs a peak having a wavelength thesame as or near the peak wavelength, based on the peak wavelength of thepump light detected by the control wavelength detector 18. As for thecontrol contents, the temperature of the attached thermostatic module ischanged to change the wavelength or the intensity of the pump light,with respect to at least one of the semiconductor laser device and thefiber grating constituting the Raman amplifiers 1 to 4. Furthermore, thecurrent value injected into the semiconductor laser device is changed,according to need, thereby changing the intensity of the pump light.

As the specific mode of control by the controller 19, for example, thecontroller 19 emits a control signal and transmits the control signal tothe Raman amplifiers 1 to 4 via an input terminal 5 by using adirectional coupler or the like. Moreover, for example, the controlsignal may be transmitted through a down link, not through an up link inwhich the Raman amplifiers 1 to 4 are arranged, or a line dedicated forcontrol can be included. Furthermore, the control can be performed notby the optical signal but by an electric signal or the like.

The operation of the amplification gain controller 7 will be explainednext. FIG. 6 is a graph of a state in which the flat gain wavelengthcharacteristic is disturbed due to some cause, and FIG. 7 is a flowchartof the operation of the amplification gain controller 7. As shown inFIG. 6, since the gain wavelength characteristic (curve I₁′) obtained bythe Raman amplifier 1 is shifted toward lower intensity as a whole, theflatness is also disturbed with respect to the gain wavelengthcharacteristic of the entire Raman amplifying device indicated by acurve I₅′. The operation of the amplification gain controller 7 will beexplained with reference to the flowchart in FIG. 7, for an example inwhich the gain wavelength characteristic is as shown in FIG. 6. Theinput light has a flat intensity wavelength characteristic in apredetermined wavelength range. As a result, the light amplified by theRaman amplifiers 1 to 4 has the intensity wavelength characteristic sameas the gain wavelength characteristic shown in FIG. 6.

The presence of the wavelength component outside the tolerance, of thelight amplified by the Raman amplifiers 1 to 4, is detected, and thewavelength is detected when the wavelength component is present (stepS101). Specifically, the amplified light is branched for eachpredetermined wavelength range by the optical branching filter 15 andinput to the control wavelength detector 18 after having been convertedto an electric signal by the photoelectric transducers 16 a to 16 h. Thecontrol wavelength detector 18 compares the electric signalcorresponding to the respective wavelength components of the amplifiedlight with the tolerance stored in the storage unit 17, to detect thewavelength component outside the tolerance. At this step, when thewavelength component outside the tolerance is not present, the operationof the amplification gain controller 7 is finished at this point intime.

The Raman amplifier having a predetermined gain peak is selected basedon the wavelength detected at step S101 (step S102). Specifically, sincethe peak wavelength of the pump light corresponding to the wavelength ofthe amplified light is stored in the storage unit 17, the gain peak thesame as or near the wavelength of the detected wavelength component isdetected and the Raman amplifier that supplies such a gain peak isselected. In the example shown in FIG. 6, since λ₂ approaches λ₅, andλ₂′ approaches λ₆, the Raman amplifier 2 having the gain peak ofwavelengths λ₂ and λ₂′ is selected.

The control signal is then transmitted to the selected Raman amplifier,to change the gain wavelength characteristic of the Raman amplifier(step S103). Specifically, the Raman amplifier having received thecontrol signal changes the temperature of the fiber gratings or thesemiconductor laser devices included therein and the current value.injected into the semiconductor laser devices as required, according tothe content of the control signal. By changing the temperature or thelike, at least one of the wavelengths and the intensity of the gain peakin the selected Raman amplifier are changed. In the example shown inFIG. 6, a control signal is provided to the Raman amplifier 2 thatoutputs the pump light of a wavelength corresponding to the gain peakwavelength λ₂ and λ₂′, and the wavelength of the two gain peaks of theRaman amplifier 2 is shifted to the short wavelength side by Δλ. Asshown in FIG. 8, the gain peak wavelength is also changed to λ₂-Δλ andλ₂′-Δλ, and the entire curve I₂ is shifted to the short wavelength side,to change to a curve I₂′.

Presence of the wavelength component outside the tolerance is detectedwith respect to the light amplified based on the changed gain wavelengthcharacteristic (step S104). Specifically, the presence of the wavelengthcomponent outside the tolerance is checked by the same method as at stepS101, and when the wavelength component outside the tolerance ispresent, control returns to step S102. When control returns to stepS102, a Raman amplifier different from the selected Raman amplifier isselected to change the gain wavelength characteristic again at stepS103. When the wavelength component outside the tolerance is notpresent, since it is no more necessary to perform the control, theoperation of the amplification gain controller 7 is finished. In theexample shown in FIG. 6, as shown in FIG. 8, since the gain wavelengthcharacteristic of the entire Raman amplifying device is flattened, theoperation of the amplification gain controller 7 is finished.

The Raman amplifying device according to the first embodiment hasadvantages described below. At first, since the amplification gaincontroller 7 is provided, there is an advantage in that fluctuations inthe gain wavelength characteristic due to environmental conditions of aplace where the Raman amplifying device is installed can be reduced. Asdescribed above, in the optical communication system performing longdistance transmission, the Raman gain coefficient in the amplifyingtransmission path in which Raman amplification is performed or theattenuation constant of the pump light output from the semiconductorlaser devices may change, due to fluctuations in the temperature or thelike in the external environment. Therefore, when the Raman amplifyingdevice is actually installed, the gain wavelength characteristic can bedifferent from the gain wavelength characteristic at the time ofproduction, depending on the environmental conditions. In the firstembodiment, since the amplification gain controller 7 is provided, thegain wavelength characteristic of the entire Raman amplifying device canbe adjusted, and hence, a Raman amplifying device that does not dependon the change in the environmental conditions can be realized.

There is another advantage in that fluctuations in the gain wavelengthcharacteristic due to a malfunction can be reduced. As shown in theexample in FIG. 6, the gain wavelength characteristic of the entireRaman amplifying device may change due to a malfunction in the Ramanamplifier 1 constituting the Raman amplifying device. However, thefluctuations in the gain wavelength characteristic of the entire Ramanamplifying device can be dissolved or improved to some extent bychanging the gain wavelength characteristic of the Raman amplifier 2 bythe amplification gain controller 7. Replacement of the failed part maybe difficult according to the place where the Raman amplifying device isarranged. Therefore, it is a great advantage that the gain wavelengthcharacteristic can be maintained at a certain level until the part isreplaced.

When the Raman amplifying device according to the first embodiment isused in the optical communication system or the like, there is anadvantage in that deterioration of a signal light source can be dealtwith. In the first embodiment, the amplification gain controller 7 has aconfiguration of directly detecting the wavelength intensitycharacteristic of the Raman-amplified light (the signal light in theoptical communication system), to control the gain wavelengthcharacteristics of the Raman amplifiers 1 to 4. Therefore, for example,even when the intensity wavelength characteristic of the signal lightinput to the Raman amplifying device loses the flatness due todeterioration in the signal light source, though the Raman amplifiers 1to 4 realize desired gain wavelength characteristics, the amplificationgain controller 7 controls the Raman amplifiers 1 to 4 so that theamplified light output from the Raman amplifying device has a flatwavelength intensity characteristic. Therefore, fluctuations in thewavelength intensity characteristic due to deterioration in the signallight source can be dissolved or improved to some extent.

The Raman amplifying device according to the first embodiment hasanother advantage in that when a trouble occurs in any of the Ramanamplifiers 1 to 4, the failed Raman amplifier can be determined quickly.Since the control wavelength detector 18 determines the Raman amplifierhaving a predetermined gain peak based on the information stored in thestorage unit 17, the failed Raman amplifier can be quickly determined.Particularly, in the first embodiment, since the Raman amplifiers 1 to 4have gain peaks of a different wavelength, the Raman amplifier is inone-to-one correspondence with the wavelength having the intensityoutside the tolerance in the amplified light. As a result, the failedRaman amplifier can be easily determined.

The Raman amplifying device according to the first embodiment has astructure formed by Raman amplifiers having different adjacent gainpeaks, the gain wavelength characteristic can be easily flattened. Asdescribed above, in the Raman amplifying device according to the firstembodiment, since the adjacent gain peaks are formed by different Ramanamplifiers, the wavelength interval between the adjacent gain peaks canbe made equal to or smaller than 6 nanometers. Therefore, for example,the wavelength interval between the adjacent gain peaks can be made thesame level as the wavelength variable amount of the gain peaks by therespective semiconductor laser devices or the fiber gratings, therebyenlarging the wavelength variable range by the amplification gaincontroller 7 and flattening the gain wavelength characteristic veryeasily. For example, when the temperature of the fiber gratings iscontrolled to control the peak wavelength of the pump light, it isdesired to set the wavelength interval between the adjacent gain peaksto 0.3 nanometers or less. Since the wavelength range that can bechanged by the fiber grating is about 0.3 nanometers, such a wavelengthinterval can make the control easy.

According to the Raman amplifying device of the first embodiment, thereis an advantage in that the control algorithm for the gain wavelengthcharacteristic can be simplified. The Raman amplifiers according to thefirst embodiment are arranged such that the wavelengths of the gainpeaks form an arithmetic sequence. Therefore, even when there is awavelength component outside the tolerance in the amplified light, thesame algorithm can be used regardless of the wavelength of such awavelength component. In other words, since the wavelength intervalbetween the gain peaks is constant, formulation is possible as to howmuch it is necessary to change the wavelengths of the adjacent gainpeaks with respect to the amount deviated from the tolerance.

In the explanation of the first embodiment, the number of the Ramanamplifiers included in the Raman amplifying device is four, but thenumber of the Raman amplifiers is not limited to four, and the Ramanamplifying device according to the first embodiment can be formed by anoptional number of Raman amplifiers.

The structure of the Raman amplifiers 1 to 4 is not limited to the onedescribed above. With reference to FIG. 2, the semiconductor laserdevices 9 a to 9 d attached with the fiber gratings 10 a to 10d canoutput laser light of different wavelengths, if these have a wavelengthdifference of 6 nanometers or more from each other. In the firstembodiment, for example, a pair of the semiconductor laser devices 9 aand 9 b is coupled so that the polarization direction thereof isorthogonal to each other. However, a depolarizer can be arranged betweenthe fiber gratings 10 a to 10 d and the optical couplers 11 a and 11 b,to directly depolarize the laser light output from the semiconductorlaser devices 9 a to 9 d. In this case, since more gain peaks can berealized by fewer semiconductor laser devices, a Raman amplifier havinga wider gain band can be realized. Not only by such a structure but alsoby the system design, a desired pump light can be realized by combiningoptional couplers for an optional wavelength configuration.

The semiconductor laser devices forming the Raman amplifiers 1 to 4 canhave a configuration of outputting laser light having a plurality ofpeaks from a single semiconductor laser device, other than the one thatoutputs the laser light having a single peak. Furthermore, the structurein which the peak wavelength is defined by the fiber grating may not beused, but a diffraction grating can be provided in the semiconductorlaser device, like a distributed feedback (DFB) laser or a distributedBragg reflector (DBR) laser. In this case, the fiber gratings can beomitted.

To change the peak wavelength of the pump light in the Raman amplifiers1 to 4, it is desired to change the current value injected into thesemiconductor laser device. It is because by changing the injectedcurrent, the refractive index inside the semiconductor laser device alsochanges to change the wavelength of the output laser light.Specifically, it is desired that a variable optical attenuator (VOA) beattached to the semiconductor laser device, to change the peakwavelength of the pump light by changing the injected current, andintensity fluctuations of the pump light due to the change in theinjected current value be suppressed by the VOA. By adopting such astructure, the peak wavelength of the pump light in the Raman amplifiers1 to 4 can be controlled by the injected current value. When such awavelength control is to be performed, there is an advantage in that thefiber gratings can be omitted.

Furthermore, it is desired to change the peak wavelength of the pumplight by controlling the temperature of the semiconductor laser devices,as well as to control a change in the peak intensity of the pump lightdue to a temperature change by controlling the injected current. Also inthis case, since the peak wavelength of the pump light can be controlleddirectly with respect to the semiconductor laser devices, the fibergratings can be omitted.

The sequence of the gain peaks forming the arithmetic sequence can bedetermined regardless of the sequence for actually arranging the Ramanamplifiers. For example, for the sequence of the Raman amplifiers, thesecan be arranged in order of the Raman amplifier 1, the Raman amplifier3, the Raman amplifier 4, and the Raman amplifier 2.

As for the control by the controller 19, not only the Raman amplifierhaving, one gain peak closest to the wavelength component deviated fromthe tolerance is controlled in the wavelength intensity characteristicof the amplified light, but other Raman amplifiers can be controlledtogether. Specifically, for example, all gain peaks in a certainwavelength interval range can be controlled with respect to thewavelength component deviated from the tolerance, or other methods canbe used.

Furthermore, the number of the semiconductor laser devices and the fibergratings constituting the Raman amplifiers 1 to 4, and the number of thephotoelectric transducers 16 a to 16 h in the amplification gaincontroller 7 are not limited to those described above, and an optionalnumber can be used.

In the Raman amplifying device according to the first embodiment, thegain wavelength characteristic thereof is not limited to the flat gainwavelength characteristic. In the above explanation, the flat gainwavelength characteristic is ideal, but a gain wavelength characteristicfor compensating for a loss wavelength characteristic of the entireoptical communication system or a gain wavelength characteristic forcompensating for the intensity wavelength characteristic of the lightoutput from the signal light source can be used. Furthermore, any one ofa gain wavelength characteristic required as the entire system and again wavelength characteristic satisfying the NF system requirement orboth can be used.

An example by numerical simulation will be explained. In the numericalsimulation, the gain peak of the individual Raman amplifier is actuallyspecified, to perform control by the amplification gain controller 7. Inthis example, it is assumed that the number of Raman amplifiers is 5(Raman amplifiers A to E), and the number of gain peaks is 4.

FIG. 9A depicts wavelengths λ_(p1) to λ_(p4) of the gain peaks of therespective Raman amplifiers before the control by the amplification gaincontroller 7, and FIG. 9B depicts the intensity of the respective gainpeaks of the respective Raman amplifiers. For example, in the Ramanamplifier A before the control by the amplification gain controller 7,the wavelength of the gain peak in the wavelength λ_(p1) is 1424.192nanometers, and the peak intensity is 186 milliwatts. The wavelength ofthe wavelength λ_(p4) in the Raman amplifier B is 1493.143 nanometers,and the peak intensity is 179 milliwatts. For the amplifyingtransmission path, a single mode fiber (SMF) having a length of 50kilometers is used. In this example, for the brevity of explanation, theintensity of the gain peak is not particularly changed, and the gainwavelength characteristic of the Raman amplifying device is controlledby controlling the wavelength of the gain peak.

In the case of the gain wavelength characteristics shown in FIGS. 9A and9B, the intensity wavelength characteristic of the amplified lightbecomes such that a difference between the maximum value and the minimumvalue of the intensity is 0.75 decibel. In contrast, the tolerance isset so that a difference between the maximum value and the minimum valueof the intensity becomes equal to or less than 0.70 decibel.

The wavelength of the gain peak of the respective Raman amplifiers ischanged as shown in FIG. 10, by a virtual control by the amplificationgain controller 7 (in practice, a simulation). Specifically, thewavelength of the second gain peak of the Raman amplifier B is changedfrom 1444.234 nanometers to 1444.034 nanometers, and the wavelengths ofthe second gain peak and the third gain peak of the Raman amplifier Care changed, respectively, from 1448.544 nanometers to 1448.744nanometers, and from 1466.045 nanometers to 1465.845 nanometers. Thewavelengths of the second gain peak and the fourth gain peak of theRaman amplifier D are also changed, respectively, from 1435.616nanometers to 1435.816 nanometers, and from 1484.525 nanometers to1484.725 nanometers. Furthermore, the wavelengths of the first, thethird, and the fourth gain peaks of the Raman amplifier E are changed,respectively, from 1415.573 nanometers to 1415.373 nanometers, from1448.807 nanometers to 1449.007 nanometers, and from 1480.215 nanometersto 1480.415 nanometers.

Thus, by changing the wavelength of the respective gain peaks, thedifference between the maximum value and the minimum value in theintensity wavelength characteristic of the light amplified by the Ramanamplifiers A to E is changed to 0.69 decibel. The difference can bereduced up to 0.69 decibel by setting the tolerance such that thedifference between the maximum value and the minimum value becomes equalto or less than 0.70 decibel.

A Raman amplifying device according to a second embodiment of thepresent invention will be explained. The Raman amplifying deviceincludes a Raman amplifier having a predetermined gain characteristic,and a Raman amplifier whose predetermined amplification gaincharacteristic is shifted by a shift amount determined based on the sumapproximation of periodic functions of such a gain characteristic, withrespect to the gain characteristic of the Raman amplifier, therebyrealizing flattening of the gain characteristic as a whole. According tothe second embodiment, the specific configuration of the Ramanamplifying device is the same as that of the first embodiment, and theRaman amplifying device according to the second embodiment has aconfiguration shown in FIGS. 1, 2, and 5. Derivation of the shift amountby the sum approximation of periodic functions, which is the differentpoint from the first embodiment, will be explained first, and a specificexample will be explained thereafter.

The wavelength of the gain characteristic of the Raman amplifier can beapproximated by the sum of the periodic functions, as in the case ofgeneral functions. When the distribution of periodic functionsconstituting the approximation formula of the gain characteristicwavelength is taken into consideration, in the case of the gaincharacteristic having excellent flatness, the approximation formula isformed by periodic functions having a long period or having an infiniteperiod, or by various periodic functions having substantially the sameamplitude, to compensate for the influence thereof, and a flatwavelength is realized as a whole. On the other hand, in the case of thegain characteristic having poor flatness, there is a periodic functionhaving larger amplitude as compared to others, among the periodicfunctions constituting the approximation formula. In other words, it canbe considered that the flatness of the gain characteristic is disturbeddue to the presence of the periodic function having larger amplitude ascompared to others.

Based on the consideration above, in the second embodiment, the shiftamount is determined by using the result of sum approximation ofperiodic functions of the gain characteristic formed by one or moreRaman amplifiers as a reference. In other words, the shift amount of thegain characteristic is determined based on the period of a periodicfunction selected from the periodic functions used for the sumapproximation of periodic functions, for example, based on the period ofa periodic function having the largest amplitude, so that the influenceof such a periodic function is reduced. A Raman amplifying device havinga flat gain characteristic is realized as a whole, by newly adding aRaman amplifier having a gain characteristic shifted by the determinedshift amount with respect to the gain characteristic of the Ramanamplifier as the reference.

An example in which Fourier transformation is used as one method of thesum approximation of periodic functions for the gain characteristic willbe explained. As one example of the gain characteristic for which thesum approximation of periodic functions is carried out, an example inwhich the frequency-dependent gain frequency characteristic of theamplification gain is used will be explained. However,frequency-dependent gain wavelength characteristic of the amplificationgain can be used as the gain characteristic to be used for the sumapproximation of periodic functions.

For simplicity, a Raman amplifying device shown in FIG. 11A, whichincludes a Raman amplifier having an optional gain frequencycharacteristic G(f), and a Raman amplifier having a gain frequencycharacteristic G(f−f₀) shifted by a frequency f₀ with respect to thegain frequency characteristic G(f), will be taken into consideration.The gain frequency characteristic as the entire Raman amplifying deviceis given by G(f)+G(f−f₀), and the frequency f₀ is determined hereunderso that G(f)+G(f−f₀) becomes a flat function with respect to a frequencychange.

Generally, when it is assumed that a function mapped in an X space byperforming Fourier transformation with respect to the gain frequencycharacteristic G(f) by a kernel exp(−i2πfX) is F(X), the gain frequencycharacteristic G(f) and F(X) have the following relationship

$\begin{matrix}{{F(X)} = {\int_{- \infty}^{\infty}{{G(f)}{\mathbb{e}}^{- {\mathbb{i}2\pi fX}}\ {\mathbb{d}f}}}} & (1)\end{matrix}$

A variable X used for the Fourier transformation in equation (1) is avariable that means a reciprocal of a period of the approximatedperiodic function. The gain frequency characteristic G(f−f₀) and F(X)have the following relationship

$\begin{matrix}{{\int_{- \infty}^{\infty}{{G\left( {f - f_{0}} \right)}{\mathbb{e}}^{- {\mathbb{i}2\pi fX}}\ {\mathbb{d}f}}} = {{{\mathbb{e}}^{{- {\mathbb{i}2\pi f}_{0}}X}{\int_{- \infty}^{\infty}{{G(f)}{\mathbb{e}}^{- {\mathbb{i}2\pi fX}}\ {\mathbb{d}f}}}} = {{\mathbb{e}}^{{- {\mathbb{i}2\pi f}_{0}}X}{F(X)}}}} & (2)\end{matrix}$

From equations (1) and (2), Fourier transform mapping of the gainfrequency characteristic of the Raman amplifying device including theRaman amplifier having the gain frequency characteristic G(f), and theRaman amplifier having the gain frequency characteristic G(f−f₀) becomes{1+exp(−i2πf₀X)}F(X). A power spectrum of such mapping is expressed as|1+e ^(−i2πf) ⁰ ^(X)|² |F(X)|²=4 cos²(θX)|F(X)|²  (4)by usingθ=πf₀  (3)In the Raman amplifying device according to the second embodiment, byadjusting the gain characteristic of the Raman amplifier, which is aconstituent, so that the peak value of the power spectrum expressed byequation (4) is decreased, a Raman amplifying device having a flat gainfrequency characteristic is realized.

Specifically, as shown in FIG. 11 B, since X giving a peak value ispresent with regard to |F(X)|² obtained from G(f), at first, a valueX_(MAX) of X giving the maximum value of |F(X)|² is derived. It isassumed here that X_(MAX) is selected from X≠0. That is, from equation(3), since cos(θX) is a function of f₀, by appropriately selecting thevalue of f₀, the value cos²(θX) in equation (4) decreases, therebydecreasing the peak value of the power spectrum in X=X_(MAX).Specifically, as shown in FIG. 11C, the value of shift amount f₀ isselected in a range of from 1/(4X_(MAX)) to 3/(4X_(MAX)) inclusive. Morepreferably, the value f₀ is determined so that the value of equation (4)in X=X_(MAX) becomes the smallest. Specifically, the peak value of thepower spectrum can be decreased by setting the value of f₀ to1/(2X_(MAX)). By decreasing the peak value of the power spectrum, theflatness of the entire power spectrum can be improved, thereby improvingthe flatness of the gain frequency characteristic of the Ramanamplifying device.

With regard to derivation of the shift amount of the gain characteristicof the Raman amplifier constituting the Raman amplifying deviceaccording to the second embodiment, Fourier transformation expressed byequation (1) can be substituted by discrete Fourier transformation usinga computer. In the discrete Fourier transformation, the frequency f ishandled as N discrete values such as f₁, f₁+h, f₁+2h, . . . , f₁+(n−1)h,. . . , f₁+(N−1)h(=f₂), in the gain frequency characteristic G(f) of theRaman amplifier A, and the following calculation is performed withregard to the gain frequency characteristic Gn corresponding to therespective frequencies

$\begin{matrix}{{F\left( {X,{f_{2} - f_{1}}} \right)} = {h{\sum\limits_{N = 0}^{N - 1}\;{G_{n}{\exp\left( {- {{\mathbb{i}2\pi X}\left( {f_{1} + {nh}} \right)}} \right)}}}}} & (5)\end{matrix}$Accompanying discretization of the frequency f and the gain frequencycharacteristic Gn, the variable X is also discretized and is expressedas X=X_(k)=kX₀=k/Nh (k=0, 1, . . . , N−1).

In the discrete Fourier transformation, a Fourier component F_(k) isdefined as a value corresponding to F(X) obtained by the Fouriertransformation in equation (1). Specifically, the Fourier componentF_(k) is expressed asF _(k) =F(X _(k) , f ₂−f₁)/h  (6)The square of an absolute value of the Fourier component F_(k)corresponds to the power spectrum |F(X)|² in the Fourier transformationin equation (1). Therefore, when the discrete Fourier transformation isused, the discrete Fourier transformation shown in equation (5) can beperformed with respect to the gain frequency characteristic Gn of theRaman amplifier A, to derive k, by which the square of the absolutevalue of the Fourier component shown in equation (6) becomes themaximum. Based on the value of X_(k) corresponding to k, the Ramanamplifier B has a gain frequency characteristic in which the frequencyis shifted with respect to the gain frequency characteristic Gn by1/(4X_(k)) or more, and 3/(4X_(k)) or less, more preferably, by1/(2X_(k)), thereby realizing the Raman amplifying device having a flatgain frequency characteristic.

Example 1, which is a specific example of the theory explained in thesecond embodiment, will be explained. The Raman amplifying deviceaccording to the Example 1 has a configuration in which a Ramanamplifier having a gain characteristic shown in FIG. 12 (In FIG. 12, thewavelength is plotted on the X axis) is combined with another Ramanamplifier having a gain characteristic shifted with respect to the gaincharacteristic by a shift amount obtained by Fourier transform mapping.

The Raman amplifier having the gain characteristic shown in FIG. 12(hereinafter, “Raman amplifier A”) has an amplification characteristicin which the wavelength band of a signal light to be amplified is from1530 to 1610 nanometers, a channel interval, which is a frequencyinterval between signal lights having the closest frequencies, is 100gigahertz, and the number of channels is 96. As a specificconfiguration, a dispersion-shifted fiber (DSF) having a fiber length of80 kilometers is used as a Raman amplification medium, and a pump lightemitted from eight semiconductor laser devices is introduced to theRaman amplification medium according to the backward pumping method. Thegain characteristic of the Raman amplifier A shown in FIG. 12 is suchthat a gain mean value is 16.131 decibels, and a difference between themaximum value and the minimum value of the gain is 0.279 decibel. Therelation between the wavelength (unit: nanometer) of the pump light andthe intensity (unit: milliwatt) of the pump light in the Raman amplifierA is shown in Table 1.

TABLE 1 Wavelength 1422.84 1433.04 1442.00 1451.78 1461.69 1471.011480.46 1503.47 of pump light Intensity of  244.02  188.21  114.10 91.88  53.43  50.36  29.19  61.42 pump light

Derivation of the shift amount of the gain characteristic of the Ramanamplifier (hereinafter, “Raman amplifier B”) that flattens the gaincharacteristic of the entire Raman amplifying device by being combinedwith the Raman amplifier A having such a gain characteristic will beexplained below. At first, the gain frequency characteristic of theRaman amplifier A is Fourier-transformed in the X space, to derive apower spectrum, which is the square of the absolute value of F(X_(k))obtained by Fourier transformation. The Fourier transformation in theExample 1 uses the discrete Fourier transformation.

FIG. 13 is a graph of the X_(k) dependency of the power spectrum derivedby the discrete Fourier transformation. In FIG. 13, the X-axis denotes avalue of k in X_(k)=k/Nh. In the discrete Fourier transformationperformed in the Example 1, the frequency band (f2−f1) is 9.6 terahertz,and a sampling cycle h is 0.1 terahertz. Therefore, the number ofsampling is N=9.6/0.1=96, and if the value on the X-axis in FIG. 13 isdivided by 9.6, X_(k)(THz)⁻¹ can be obtained. The power spectrum in thecase of k being equal to N/2 or larger, that is, in this example, k≧49can be ignored, according to the sampling theorem.

In other words, according to the Example 1, k needs only to be derived,by which the power spectrum |F_(k)|² becomes the largest in the range of0≦k≦48. It is obvious that the k value is 7 from the graph shown in FIG.13, and hence, the value of X_(k), at which the power spectrum |F_(k)|²becomes the largest is 7/(96×0.1), from X_(k)=k/Nh, N=96, and h=0.1.

To flatten the gain frequency characteristic as the entire Ramanamplifying device, the gain frequency characteristic of the Ramanamplifier B needs only to be shifted with respect to the gain frequencycharacteristic of the Raman amplifier A by 1/(4X_(k)) or more, and3/(4X_(k)) or less, more preferably, by 1/(2X_(k)). Therefore, in thecase of the Example 1, the gain frequency characteristic of the Ramanamplifier B is shifted with respect to the gain frequency characteristicof the Raman amplifier A by a quantity of from 0.345 to 1.035 teraheltz,and more preferably, by 0.69 teraheltz.

When the frequency shift amount is 0.69 teraheltz, one example of therelation between the wavelength (unit: nanometer) of the pump light andthe intensity (unit: milliwatt) of the pump light in the Raman amplifierB is as shown in Table 2.

TABLE 2 Wavelength 1427.49 1437.76 1446.78 1456.62 1466.59 1475.981485.49 1508.66 of Pump light Power of  233.67  174.96  110.18  88.85 52.24  48.29  29.70  60.91 pump light

FIG. 14 is a graph of the gain characteristic of the Raman amplifier Aand the gain characteristic of the Raman amplifier B, when the frequencyshift amount relating to the gain frequency characteristic of the Ramanamplifier B is 0.69 teraheltz. In FIG. 14, wavelength is plotted on theX-axis in the gain characteristic. In FIG. 14, a curve I₁₃ indicates thegain characteristic of the Raman amplifier A, and a curve I₁₄ indicatesthe gain characteristic of the Raman amplifier B. The direction ofshifting the frequency can be either a high frequency direction or a lowfrequency direction, but in the Example 1, the gain characteristic ofthe Raman amplifier B is shifted with respect to the gain characteristicof the Raman amplifier A to the long wavelength side (low frequencyside), as shown in FIG. 14.

As shown in FIG. 14, the gain characteristic of the Raman amplifier B isformed such that a valley is formed in the peak in the gaincharacteristic of the Raman amplifier A, and a peak is formed in thevalley in the gain characteristic of the Raman amplifier A. Therefore,it is obvious that the gain characteristic of the Raman amplifier Bfunctions so as to flatten the undulations in the gain characteristic ofthe Raman amplifier A.

FIG. 15 is a graph of the gain characteristic of the entire Ramanamplifying device according to the Example 1, combining the gaincharacteristic of the Raman amplifier A and the gain characteristic ofthe Raman amplifier B. In FIG. 15, a curve I₁₅ indicates the gaincharacteristic of the entire Raman amplifying device according to theExample 1 in which the Raman amplifier A and the Raman amplifier B arecombined, and a curve I₁₆ indicates the gain characteristic of a Ramanamplifying device in which two Raman amplifiers A are serially connectedfor the comparison.

As shown in FIG. 15, the Raman amplifying device according to theExample 1 can realize a gain characteristic having excellent flatness,as compared to the configuration in which two Raman amplifier A areconnected. Specifically, a difference between the maximum value and theminimum value of the gain in the use band when the two Raman amplifiersA are connected is 0.558 decibel, while the Raman amplifying deviceaccording to the Example 1 can decrease the difference between themaximum value and the minimum value of the gain up to 0.111 decibel.

A Raman amplifying device according to an Example 2 of the secondembodiment will be explained. The Raman amplifying device according tothe Example 2 is formed of four Raman amplifiers, wherein afterapproximation by the sum of periodic functions is performed with respectto the gain characteristic realized by the existing two Ramanamplifiers, the shift amount of the Raman amplifier having the similarpattern to that of the existing Raman amplifiers is determined.

According to the Example 2, the Raman amplifier A and the Ramanamplifier B explained in the Example 1 are used as the existing twoRaman amplifiers. Based on the sum approximation of periodic functionsof the gain characteristic of the existing Raman amplifiers, the shiftquantities relating to the gain characteristic of newly added Ramanamplifier C and Raman amplifier D are determined. According to theExample 2, the configuration of the used Raman amplifier is the same asin the Example 1, and even in the discrete Fourier transformation, thefrequency band (f₂−f1), the sampling cycle h, and the number N ofsampling are the same as in Example 1, and the power spectrum of k≧49can be similarly ignored based on the sampling theorem. Derivation ofthe shift amount relating to the gain characteristic of the Ramanamplifier C and the Raman amplifier D will be specifically explainedbelow.

At first, discrete Fourier transformation is performed with respect tothe gain frequency characteristic formed by the sum of the gainfrequency characteristic of the Raman amplifier A and the gain frequencycharacteristic of the Raman amplifier B. FIG. 16 is a graph of theresults of discrete Fourier transformation performed with respect to thegain frequency characteristic formed by the sum of the gain frequencycharacteristic of the Raman amplifier A and the gain frequencycharacteristic of the Raman amplifier B. In FIG. 16, the X-axis denotesa value of k forming X_(k), as in FIG. 13, and the Y-axis denotes theintensity of the power spectrum. In FIG. 16, the power spectrum in k≧49is ignored based on the sampling theorem as in FIG. 13.

As shown in FIG. 16, since the value of k giving the largest powerspectrum is 3, from X_(k)=k/Nh, N=96, and h=0.1 in the Example 2, thevalue of X_(k) at which the power spectrum becomes the largest is3/(96×0.1). Therefore, in order to flatten the gain frequencycharacteristic of the Raman amplifying device according to the Example 2formed of the Raman amplifiers A to D, the gain frequencycharacteristics of the Raman amplifiers C and D need only to be shiftedfrom the gain frequency characteristics of the Raman amplifiers A and Bby a range of from 0.8 to 2.4 teraheltz, and more preferably, by 1.6teraheltz.

According to the Example 2, the relation between the wavelength (unit:nanometer) and the intensity (unit: milliwatt) of the pump light in theRaman amplifiers C and D, when the gain frequency characteristics of theRaman amplifiers C and D are shifted from the gain frequencycharacteristics of the Raman amplifiers A and B toward the highfrequency side (short wavelength side) by 1.6 teraheltz, is shown inTables 3 and 4, respectively.

TABLE 3 Wavelength 1433.72 1444.09 1453.19 1463.12 1473.18 1482.651492.25 1515.63 of Pump light Power of  219.53  165.08  102.68  85.63 48.29  33.85  48.72  50.82 pump light

TABLE 4 Wavelength 1438.45 1448.87 1458.04 1468.03 1478.16 1487.701497.36 1520.91 of Pump light Power of  210.98  160.49  101.53  83.09 44.14  48.32  33.15  55.48 pump light

The gain characteristic of the Raman amplifying device as a whole insecond embodiment obtained by newly combining the Raman amplifiers C andD having the wavelength of a pump light and the intensity of a pumplight as shown in Tables 3 and 4 will be explained. FIG. 17 is a graphof the gain characteristic of the Raman amplifying device as a whole inthe Example 2. In FIG. 17, a curve I₁₇ indicates the gain characteristicof the Raman amplifying device according to the Example 2, and a curveI₁₈ indicates the gain characteristic of a Raman amplifying device inwhich two Raman amplifying devices according to the Example 1 areserially connected, that is, two Raman amplifiers A and two Ramanamplifiers B are connected. Furthermore, a curve I₁₉ indicates the gaincharacteristic in a configuration in which four Raman amplifiers A areserially connected.

As shown in FIG. 17, the Raman amplifying device according to theExample 2 can realize a flatter gain characteristic, as compared with aconfiguration in which four Raman amplifiers A are serially connected,or a configuration in which two Raman amplifying devices according tothe Example 1 are serially connected. Specifically, when four Ramanamplifiers A are serially connected, the difference between the maximumvalue and the minimum value of the gain in the use band is 1.116decibels, and the difference between the maximum value and the minimumvalue of the gain when the two Raman amplifying devices in Example 1 areconnected is 0.222 decibel. In contrast, in the case of the Ramanamplifying device according to the Example 2, the difference between themaximum value and the minimum value of the gain in the use band is 0.180decibel, and as a result, it is obvious that the flatness of the gain isfurther improved.

As described in the Example 2, the Raman amplifier that realizes thegain characteristic as a reference can be provided in a plurality ofnumbers, and the Raman amplifier that realizes the gain characteristicshifted with respect to the reference gain characteristic by apredetermined quantity can be provided in a plurality of numbers.Furthermore, according to the Example 2, after the shift amount isderived, the gain characteristic of the Raman amplifier C is shiftedbased on the gain characteristic of the Raman amplifier A, and the gaincharacteristic of the Raman amplifier D is shifted based on the gaincharacteristic of the Raman amplifier B. This means that the gaincharacteristic obtained by shifting the gain characteristics obtained bythe Raman amplifiers A and B by a predetermined quantity is realized bythe Raman amplifiers C and D.

According to the second embodiment and Examples 1 and 2 thereof, anexample in which the gain frequency characteristic is used as an exampleof the gain characteristic, and sum approximation of periodic functionsis performed by the Fourier transformation relating to the frequency hasbeen explained. However, not only the gain frequency characteristic isused, but also the gain wavelength characteristic can be used as anotherexample of the gain characteristic, to perform the sum approximation ofperiodic functions by the Fourier transformation relating to thewavelength.

For example, when a certain Raman amplifier has a gain wavelengthcharacteristic G(λ), it can be expressed as

$\begin{matrix}{{F(Y)} = {\int_{- \infty}^{\infty}{{G(\lambda)}{\mathbb{e}}^{- {\mathbb{i}\lambda Y}}\ {\mathbb{d}\lambda}}}} & (1)^{\prime}\end{matrix}$by designating the frequency f as λ, 2πX as Y, and df as dλ in equation(1). Furthermore, the Fourier transformation relating to the Ramanamplifier having a gain wavelength characteristic G(λ−λ₀) is given as

$\begin{matrix}{{\int_{- \infty}^{\infty}{{G\left( {\lambda - \lambda_{0}} \right)}{\mathbb{e}}^{- {\mathbb{i}\lambda Y}}\ {\mathbb{d}\lambda}}} = {{{\mathbb{e}}^{{- {\mathbb{i}\lambda}_{0}}Y}{\int_{- \infty}^{\infty}{{G(\lambda)}{\mathbb{e}}^{- {\mathbb{i}\lambda Y}}\ {\mathbb{d}f}}}} = {{\mathbb{e}}^{{- {\mathbb{i}\lambda}}\; 0Y}{F(Y)}}}} & (2)^{\prime}\end{matrix}$as in equation (2). Therefore, the Fourier transform mapping ofG(λ)+G(λ−λ₀) is given by (1+e^(−λ0Y))F(Y), and thereafter, Y_(MAX) canbe derived by using the same method as in the instance in which theshift amount is determined based on the gain frequency characteristic,to determine a wavelength shift amount λ₀. Furthermore, at the time ofperforming. Fourier transformation relating to the wavelength, discreteFourier transformation can be used.

According to the second embodiment and Examples 1 and 2, a periodicfunction having the largest power spectrum is selected from the periodicfunctions obtained by the sum approximation of periodic functions, toderive the shift amount based on the period of the selected periodicfunction. However, it is not necessary to interpret the presentinvention by limiting the selection condition of the periodic functionthereto, but selection of the periodic function can be selected based onvarious selection conditions.

A Raman amplifying system according to a third embodiment of the presentinvention will be explained. The Raman amplifying system according tothe third embodiment has a configuration in which a plurality of groupsof Raman amplifiers in the first or the second embodiment is arranged,and a single entire gain controller controls the gain wavelengthcharacteristics of those Raman amplifiers. FIG. 18 is a block diagram ofthe configuration of the Raman amplifying system according to the thirdembodiment, and the Raman amplifying system will be explained withreference to FIG. 18.

The Raman amplifying system according to the third embodiment includes agroup 21A in which Raman amplifiers 21 a to 21 n are sequentiallyconnected, a group 22A in which Raman amplifiers 22 a to 22 n aresequentially connected, group 23A in which Raman amplifiers 23 a to 23 nare sequentially connected, and group 24A in which Raman amplifiers 24 ato 24 n are sequentially connected. The groups 21A to 24A aresequentially connected to an input terminal 20, an optical branchingunit 25 is connected to the group 24A, an entire gain controller 26 isconnected to one of the output terminals of the optical branching unit25, and an amplified light is output from the other output terminal 27of the optical branching unit 25.

The Raman amplifiers 21 a to 21 n have respectively different gainwavelength characteristics, as in the Raman amplifiers 1 to 4 in thefirst or the second embodiment, and have a gain peak of a wavelengthdifferent from each other. Therefore, a gain deviation can be preventedfrom being accumulated, as compared with an instance in which Ramanamplifiers having the same gain wavelength characteristic are provided.The wavelengths of the gain peak obtained from the Raman amplifiers 21 ato 21 n form an arithmetic sequence, and since the wavelength intervalbetween the respective gain peaks becomes the same, the gain wavelengthcharacteristic of the whole group 21A is flattened. The adjacent gainpeaks are obtained from different Raman amplifiers. Therefore, thoughthe wavelength interval between the gain peaks in the respective Ramanamplifiers 21 a to 21 n is equal to or larger than 6 nanometers, thewavelength interval between gain peaks as the whole group 21A can bemade equal to or smaller than 6 nanometers, thereby realizing improvedflatness. The Raman amplifiers 21 a to 21 n respectively have the samestructure as shown in FIG. 2, and the number of the gain peaks can betwo or more. It is desired that the tolerance of the arithmetic sequenceis a mean value of the wavelength intervals between the adjacent gainpeaks in an optional Raman amplifier forming the group.

The Raman amplifiers 21 a, 22 a, 23 a, and 24 a of the Raman amplifiersbelonging to different groups have substantially the same gainwavelength characteristic and a gain peak of substantially the samewavelength. Likewise, Raman amplifiers 21 b to 24 b, and Ramanamplifiers 21 c to 24 c have substantially the same gain wavelengthcharacteristic and a gain peak of substantially the same wavelength.Therefore, the groups 22A to 24A have the same gain wavelengthcharacteristic as that of the group 21A, and have a flat gain wavelengthcharacteristic as in the group 21A.

Thus, since there are Raman amplifiers belonging to different groups andhaving the same gain wavelength characteristic, a set is set up for eachof Raman amplifiers having the same gain wavelength characteristic. Thatis, Raman amplifiers 21 a to 24 a are designated as a set 28 a, Ramanamplifiers 21 b to 24 b are designated as a set 28b, and so forth, toset up sets 28 a to 28 n.

The structure of the entire gain controller 26 will be explained withreference to FIG. 19. FIG. 19 is a block diagram of the structure of theentire gain controller 26. The entire gain controller 26 includes anoptical branching filter 29 that branches the light input from theoptical branching unit 25 for each wavelength, photoelectric transducers30 a. to 30 h that convert the branched light to an electric signal, astorage unit 31 that stores necessary information, a control wavelengthdetector 32 connected to the photoelectric transducers 30 a to 30 h andthe storage unit 31, and a controller 33 that controls the storage unit31, the control wavelength detector 32, and the sets 28 a to 28 n.

The optical branching filter 29 is formed of a melt-type coupler inwhich a plurality of optical fibers is melt-coupled, an array waveguide,a diffraction grating and the like, for branching the input light foreach predetermined wavelength range. The photoelectric transducers 30 a.to 30 h are formed of a photodiode or the like.

The storage unit 31 stores information relating to the intensitytolerance of a light branched by the optical branching filter 29, thewavelength of the gain peak corresponding to the wavelength component ofthe branched light, and by which sets 28 a to 28 n such a wavelength ofthe gain peak is supplied. The control wavelength detector 32 has afunction of inputting an electric signal corresponding to the branchedwavelength component, and detecting a set corresponding to a wavelengthcomponent deviated from the tolerance by appropriately referring to theinformation stored in the storage unit 31, to output the set to thecontroller 33.

The controller 33 is for controlling the storage unit 31, the controlwavelength detector 32, and the sets 28 a to 28 n. Specifically, thecontroller 33 has a function of controlling the operation of the storageunit 31 and the control wavelength detector 32, and controlling the gainwavelength characteristic of the Raman amplifiers belonging to the sets28 a to 28 n, based on the information output from the controlwavelength detector 32.

The operation of the entire gain controller 26 will be explained next.FIG. 20 is a flowchart of the operation of the entire gain controller26. The operation of the entire gain controller 26 will be explainedwith reference to the flowchart shown in FIG. 20.

At first, the entire gain controller 26 detects the presence of awavelength component outside the tolerance with regard to the inputamplified light, and when there is such a wavelength component, detectsthe wavelength thereof (step S201). Specifically, the lights amplifiedby the Raman amplifiers are branched for each predetermined wavelengthcomponent by the optical branching filter 29 shown in FIG. 19, and afterbeing converted to an electric signal by the photoelectric transducers30 ato 30 h, input to the control wavelength detector 32. The controlwavelength detector 32 detects the presence of the wavelength componentoutside the tolerance, with regard to the intensity of the electricsignals corresponding to the respective wavelength components, byreferring to the information stored in the storage unit 31, and whenthere is such a wavelength component, detects the wavelength thereof.When a wavelength component outside the tolerance is not detected, theoperation of the entire gain controller 26 finishes.

A set having a predetermined gain peak is then selected based on thewavelength of the detected wavelength component (step S202).Specifically, the storage unit 31 stores the information relating to thepeak wavelength corresponding to the respective wavelength components ofthe amplified lights, and to which set the Raman amplifier having thepeak wavelength belongs, and based on such information, an appropriateset is selected.

Thereafter, the entire gain controller 26 selects a Raman amplifierbelonging to the selected set (step S203), to change the gain wavelengthcharacteristic of this Raman amplifier (step S204). The Raman amplifierbelonging to the set has substantially the same gain wavelengthcharacteristic, and hence, an optional Raman amplifier belonging to theset is selected, to change the gain wavelength characteristic of theRaman amplifier. In the selected Raman amplifier, the temperature of thefiber gratings and the semiconductor laser devices and the electriccurrent injected into the semiconductor laser devices are changed, tochange the wavelength and the intensity of the gain peak. Thus, bychanging the gain wavelength characteristic of the selected Ramanamplifier, the gain wavelength characteristic of the entire Ramanamplifying system changes.

The entire gain controller 26 then checks whether the intensity of thewavelength component detected at step S201 is reduced so as to be withinthe tolerance, with respect to the amplified light based on the changedgain wavelength characteristic (step S205). Specifically, the entiregain controller 26 checks the presence of a wavelength component outsidethe tolerance by the same method as at step S201. When there is such awavelength component, control returns to step S203, to select anotherRaman amplifier belonging to the same set. When there is no wavelengthcomponent outside the tolerance, the operation of the entire gaincontroller 26 finishes.

The reason why an optional Raman amplifier belonging to a predeterminedset is selected at step S203 is that the entire gain controller 26detects a wavelength component outside the tolerance with respect to theamplified light at step S201, to determine to which set the Ramanamplifier having such a wavelength component belongs, but cannot decideactually which Raman amplifier has such a wavelength component.Therefore, after specifying the set to be controlled, the entire gaincontroller 26 selects an optional Raman amplifier belonging to the set.

When the gain wavelength characteristic of the entire Raman amplifyingsystem according to the third embodiment is disturbed, a possibility ofabnormality occurring in a plurality of Raman amplifiers at the sametime is low, and normally, the entire gain wavelength characteristicchanges due to a trouble or the like in one Raman amplifier. Therefore,a possibility of selecting a Raman amplifier having the trouble or thelike in the selected set is low, and by changing the gain wavelengthcharacteristic of a normal Raman amplifier, a desired gain wavelengthcharacteristic can be realized in the entire system. Even if the Ramanamplifier selected at step S203 has a trouble or the like, and the gainwavelength characteristic of the entire system cannot be improved atstep S204, the entire gain wavelength characteristic is checked again atstep S205, to return to step S203 to select another Raman amplifier,thereby changing the gain wavelength characteristic.

The Raman amplifying system according to the third embodiment has thefollowing advantages. That is, at first, since the Raman amplifyingsystem has the entire gain controller 26, fluctuations in the gainwavelength characteristic of the entire system can be reduced, whenabnormality occurs in the amplification gain wavelength characteristicof the Raman amplifier constituting the system. Therefore, even when theindividual gain wavelength characteristic changes due to a trouble in aRaman amplifier constituting the Raman amplifying system orenvironmental conditions in the arranged place, a desired gainwavelength characteristic can be realized as the entire system.Furthermore, even when the wavelength intensity characteristic,of theinput signal light deteriorates, an amplified light having a desiredwavelength intensity characteristic can be output.

The Raman amplifying system according to the third embodiment has anadvantage in that the entire gain wavelength characteristic can becontrolled easily. Normally, in the optical communication systemperforming long-distance transmissions, the Raman amplifying devices arearranged with a predetermined distance from each other. Thus, when theRaman amplifying devices are arranged, a desired gain wavelengthcharacteristic can be realized also by using the Raman amplifying deviceaccording to the first or the second embodiment. However, when the Ramanamplifying system according to the third embodiment is used, control ofthe gain wavelength characteristic can be performed only by the entiregain controller 26 that controls the entire Raman amplifying devices (aplurality of groups in the third embodiment). Therefore, a Ramanamplifying system at a lower cost can be realized.

Since control is performed by classifying the Raman amplifierssubstantially by the same gain wavelength characteristic, to set up thesets 28 a to 28 n, the control becomes easy. Since the Raman amplifiersbelonging to the respective sets have substantially the same gainwavelength characteristic, by changing the gain wavelengthcharacteristic of an optional Raman amplifier belonging to the selectedset, the gain wavelength characteristic of the entire system can beeasily controlled.

The Raman amplifying system according to the third embodiment can have aconfiguration in which the amplification gain controller 7 explained inthe first embodiment is provided at the end of the groups 21A to 24A. Inthis case, the gain wavelength characteristic in the Raman amplifyingsystem can be controlled more easily by using two control mechanisms.For example, a Raman amplifier having a trouble can be uniquelydetermined by determining a set to which the Raman amplifier having thetrouble belongs by the entire gain controller 26, and by determining agroup to which the Raman amplifier having the trouble belongs by theamplification gain controller 7. In this case, since other Ramanamplifiers belonging to the set to which the Raman amplifier having thetrouble belongs can be reliably selected, selection of the Ramanamplifier having the trouble can be avoided at step S203. Therefore, byperforming the set control and the group control together, the Ramanamplifier having the trouble can be quickly determined, and control ofthe gain wavelength characteristic of the entire system can be quicklyperformed.

As a specific arrangement of the Raman amplifiers used in the first tothe third embodiments, a distribution type or a centralized type can beused. As the configuration for specifically detecting the gaincharacteristic, the gain characteristic can be detected based on thepump light output from the respective Raman amplifiers, or the gaincharacteristic can be detected based on the intensity distribution ofthe actually amplified signal light. Furthermore, in the secondembodiment, the shift direction at the time of shifting the gaincharacteristic can be a positive direction or a negative direction. Inthe second embodiment, it is desired to increase the number of the pumplights in the respective Raman amplifier, that is, the number of gainpeaks in the individual Raman amplifier. It is because by having such aconfiguration, the amplified wavelength (frequency) band is widened.

As explained above, according to the present invention, since the Ramanamplifying device includes a plurality of Raman amplifiers, and thesecond gain peak is positioned between the adjacent gain peaks of thefirst Raman amplifier, the wavelength interval between the adjacent gainpeaks can be optionally set as the entire Raman amplifying device.Furthermore, since the Raman amplifying device includes theamplification gain controller, a desired gain wavelength characteristiccan be realized.

Furthermore, since the adjacent gain peaks are provided by differentRaman amplifiers, the wavelength interval between the adjacent gainpeaks can be made equal to or less than 6 nanometers, thereby flatteningthe gain wavelength characteristic, and making the control by theamplification gain controller easy and precise.

Moreover, according to the present invention, since the Raman amplifyingdevice includes a Raman amplifier having a first gain characteristic,and a Raman amplifier having a second gain characteristic, which isshifted with respect to the first gain characteristic by a shift amountdetermined by performing sum approximation of periodic functions withrespect to the first gain characteristic and based on the periodicdistribution of periodic functions obtained from such approximation, thefirst gain characteristic and the second gain characteristic compensatefor undulations, thereby enabling a flat gain characteristic as a whole.

Furthermore, according to the present invention, since the control ofthe gain wavelength characteristic is performed by a single entire gaincontroller with respect toga plurality of groups formed by the Ramanamplifiers, control of the gain wavelength characteristic becomes easy.

Although the invention has been described with respect to a specificembodiment for a complete and clear disclosure, the appended claims arenot to be thus limited but are to be construed as embodying allmodifications and alternative constructions that may occur to oneskilled in the art which fairly fall within the basic teaching hereinset forth.

1. A Raman amplifying device including a plurality of Raman amplifiershaving a gain wavelength characteristic with a gain peak at which anamplification gain becomes the largest, the Raman amplifying devicecomprising: a first Raman amplifier having a gain wavelengthcharacteristic with a plurality of gain peaks including a first gainpeak and a second gain peak adjacent to the first gain peak; a secondRaman amplifier having a gain wavelength characteristic with at leastone gain peak including a third gain peak between the first gain peakand the second gain peak; and a third Raman amplifier having a gainwavelength characteristic with a fourth gain peak between the first gainpeak and the third gain peak, the fourth gain peak forming an arithmeticsequence between the first gain peak and the third gain peak.
 2. TheRaman amplifying device according to claim 1, wherein a wavelengthinterval between adjacent gain peaks is 6 nanometers or less.
 3. TheRaman amplifying device according to claim 1, wherein a wavelengthinterval between adjacent gain peaks is 0.3 nanometer or less.
 4. TheRaman amplifying device according to claim 1, wherein a tolerance of thearithmetic sequence is substantially equal to a value obtained bydividing a mean value of the wavelength interval between the adjacentgain peaks obtained from the first Raman amplifier by number of theRaman amplifiers.
 5. The Raman amplifying device according to claim 1,further comprising an amplification gain controller that controls thegain wavelength characteristics of the Raman amplifiers based on anintensity wavelength characteristic of a light amplified by the Ramanamplifiers.
 6. The Raman amplifying device according to claim 5, whereinthe amplification gain controller includes a wavelength detector thatselects a Raman amplifier having a gain peak closest to a wavelength ofa wavelength component whose light intensity is deviated from apredetermined tolerance in the light amplified, and the amplificationgain controller controls the gain wavelength characteristics of theRaman amplifiers in such a manner that the intensity of the lightamplified is suppressed to within the tolerance by changing at least oneof the wavelength of the predetermined gain peak and the peak intensityof the Raman amplifier selected.
 7. The Raman amplifying deviceaccording to claim 1, wherein the Raman amplifiers include a pluralityof semiconductor laser devices, each of which outputs a laser light; andan optical coupler that couples the laser beam emitted from each of thesemiconductor laser devices.
 8. The Raman amplifying device according toclaim 7, wherein the amplification gain controller changes intensitywavelength characteristic of the laser light emitted from each of thesemiconductor laser devices by controlling temperature of thesemiconductor laser devices.
 9. The Raman amplifying device according toclaim 8, wherein the Raman amplifiers further includes a fiber gratingthat determines an emission wavelength of the semiconductor laserdevice.
 10. The Raman amplifying device according to claim 9, whereinthe amplification gain controller changes intensity wavelengthcharacteristic of the laser light emitted from each of the semiconductorlaser device by controlling temperature of the fiber grating.